| 摘要 |
PURPOSE:To make a gate insulating film thin by coating with a silicon nitride film heating the surface of a gate film and the surface of a field film directly in a nitric atmosphere. CONSTITUTION:After a silicon substrate 4 is selectively oxidized to be provided with a field oxide film, a silicon oxide film 2 of a gate insulating film is formed. Next, the silicon oxide film on the whole surface of a wafer is coated with a thin nitride layer 6 by heating directly in a nitric atmosphere. Hereafter a gate electrode 3 is formed with polycrystalline silicon to prepare a source region 8 and a drain region 9 masked by the gate electrode 3 to finally form an aluminium wiring 7 for forming a MOSFEET. Accordingly the gate film is as thick as the silicon oxide film 2 with no increase in the film thickness by forming a nitrided substance thus thinly formed insulating film is obtained. |
