| 摘要 |
PURPOSE:To make adhesion of a semiconductor element with a substrate of semiconductor device favorable by a method wherein an Au-Si solder material is adhered directly on the upper face of Ni plating of the electrode substrate, and the semiconductor element is put thereon and Au-Si eutectic soldering is performed. CONSTITUTION:The Au-Si solder material is adhered on the upper face of the electrode substrate 1 being treated with Ni plating using a laser beam. At this time, because sizs of spot of the laser beam is small, the spot thereof is made to irradiate on the whole surface of the Au-Si solder material 4, or at least the whole circumferential end part of the Au-Si solder material 4 is irradiated to perform adhesion. The semiconductor element 5 is adhered by Au-Si eutectic soldering through the Au-Si solder material 4 adhered on the electrode substrate 1 thereof. |
