| 摘要 |
PURPOSE:To obtain high withstand voltage by a method wherein the upper surface of an insulating film for surface stabilization between a base electrode and an equipotential ring is provided with a conductive film so that a part thereof overlaps with the upper part of the base electrode and the equipotential ring. CONSTITUTION:A base layer 2 of an opposite conductive type is selectively formed on the main side of a negative conductive type semiconductive substrate 1 to form an emitter layer 3 of negative conductive type on the base layer. Further a high impurity region 4 of negative conductive type is formed on a base layer so as to surround the base layer 2. On the emitter layer 3, base layer 2, and the layer 4, the electrodes 6 and 7 as well as the equipotential ring 8 are formed respectively to be coated with an insulating film 10 for surface stabilization except a bonding part and a scribing part. Then the upper surface of the insulating film 10 positioned in the part held between by the base electrode 7 and the equipotential ring 8 is provided with an insulating film 11 overlapping the base electrode and the ring 8 to prevent the surface of the insulating film 10 from being sticked by the ionized stains. |
