发明名称 HALBLEITERANORDNUNG
摘要 Herein disclosed is a semiconductor device having a semiconductor element, which is constructed to include a bonding pad for the semiconductor element formed selectively on one main side of a semiconductor layer, with a nitride film so formed on the main side of said semiconductor layer as to expose the surface of said bonding pad to the outside, and with a polyimide resin film formed on both said bonding pad and said nitride film. A sealing resin is formed to cover the surface portion of the bonding pad and the nitride film. This construction seals the semiconductor element from moisture, and prevents corrosion of the bonding pad due to said moisture.
申请公布号 DE3116406(A1) 申请公布日期 1982.06.16
申请号 DE19813116406 申请日期 1981.04.24
申请人 HITACHI,LTD. 发明人 TSURUMARU,KAZUHIRO
分类号 H01L23/29;H01L21/31;H01L21/312;H01L23/31;H01L23/485 主分类号 H01L23/29
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