Process for preparing a pn-junction in a semiconductor material of group II-VI

摘要

A process for preparing a pn-junction in a semiconductor material of group II-VI is described which contains Zn. To this end, an n-type zone is formed either locally or in the entire semiconductor crystal, the crystal being grown from the liquid phase employing the temperature difference method. The crystal is then subjected to a thermal secondary treatment in a Zn melted solution or a Zn atmosphere, in order to obtain an n-type zone. The crystal growth to obtain the p-type zone is effected while maintaining a controlled vapour pressure of the group VI element. Owing to the individual measures being coordinated, a pn-junction of increased stability is obtained.