PHOTOSENSOR

摘要

PHOTOSENSOR The specification discloses photosensors having a light-transmitting conductive layer which is arranged on the side of light incidence, and a photoconductive layer in which charges are stored in correspondence with the incident light. At least the part of the photoconductive layer for storing the charges is made of an amorphous material which contains hydrogen and silicon as essential elements thereof, in which the silicon amounts to at least 50 atomic % and the hydrogen amounts to at least 10 atomic % and at most 50 atomic %, and the resistivity of which is not lower than 1010 .OMEGA..cm. The photosensor can be used as the target of an image tube, solid-state imager or the like, and has good resolving power and no afterimage formation.