| 摘要 |
PURPOSE:To make it possible to anneal a chemical vapor growth film within a reaction chamber without taking out an wafer by installing a heating means that heats directly the wafer on an wafer supporter in a chemical vapor deposition device. CONSTITUTION:A heater 12 is mounted on supporters 8, 11 of an wafer. To the heater 12 an electric power is supplied through conductive substance 15 and an electrical wiring 6 burried in the supporter 11. The wafer is kept by a claw provided on the heater 12. One utilization is this device is described in the following. A silicon wafer is set in a reaction chamber 5 and is made to be a reduced pressure state. In succession, after raw gas was introduced from a gas introducing part 3, and a vapor growth reaction was performed, contents in the reaction chamber 5 is substituted for inactive gas. At that time, electric power is supplied to the heater 12, and the wafer is heated for performing annealing. lastly, the wafer is taken out. Because the whole of the reaction chamber 5 is not heated, the wafer surface would not be stained by evaporation of adhered substance on the wall surface of the reaction chamber. |
