| 摘要 |
PURPOSE:To obtain an electrode wiring with high yield by a method wherein two steps of thermal processing are provided in a lifting-off method, so that the lifting-off can be performed even when a metal film on a side of a photoresist is thick such as the film made by sputtering. CONSTITUTION:A photoresist layer 32 of approximately 2mum thickness is formed on a semiconductor substrate 31. Then a photoresist pattern 33 is formed by a photomask and the solvent component of the photoresist is eliminated by the first thermal processing. Then a metal film 34 of a required thickness (4,000Angstrom when the photoresist thickness is approximately 2.5mum) is formed on the whole surface of the substrate by sputtering and the second thermal processing is performed under the conditions such as processing at 150-250 deg.C for 20-60min. With above method many crackings 35 are produced in the metal film on the side of the photoresist pattern. When the substrate is immersed in trichloroethylene at 60-80 deg.C, the trichloroethylene infiltrates into the photoresist pattern 33 through the crackings 35 and make the photresist swell so as to make lifting-off easy. Then excessive portions such as excessive metal film are removed and the required electrode wiring can be obtained. |
