| 摘要 |
PURPOSE:To make it possible to form the silicon single crystal film characterized by no crack, large crystal particles, and excellent crystal orientation, by using continuously oscillating neodymium laser and a substrate of glass or a substrate wherein an amorphous insulating film is deposited on a glass. CONSTITUTION:The silicon film is grown directly on the melted silica glass substrate 5 or on the deposition of a silicon dioxide film 2 in a gaseous phase. Then, patterning is performed on the silicon film, and laser light is irradiated on the silicon film by using the continuous oscillating neodymium laser, e.g., continuous oscillating YAG laser. As for the irradiating conditions, the diameter of the beam is 300mum, the scanning speed is 20mm./sec, and the pitch is 50mum. Since the melted silica glass which is transparent to the laser light is used, the substrate is not heated by the laser light, and the generation of cracks due to thermal strain can be prevented. |
