| 摘要 |
PURPOSE:To improve the symmetry of an angle of radiation by narrowly forming the width of a waveguide passage. CONSTITUTION:A P-type InP layer 12, an N-type InP layer 13, an N-type InGaAsP layer 14 and a SiO2 mask 15 are shaped onto an N-type InP semiconductor substrate 11. A V-shaped groove is formed through an opening of the SiO2 mask 15, and the SiO2 mask 15 and the N-type InGaAsP layer 14 are removed. The V-shpaed groove is buried with an N-type InGaAsP layer 16, an N-type InGaAsP active layer 17, a P-type InP layer 18 and an N-type InP layer 19 are shaped successively, a P-type impurity diffusion region 20 is molded and a current injection port at the P side is formed. A P electrode 21 and an N electrode 22 are each shaped. |
