| 摘要 |
PURPOSE:To improve the yield of manufacture of semiconductor device such as RAM by a method wherein an edge of a poly-crystal silicone pattern of a lower layer is streched out of an edge of a layer insulating film and at the same time short circuit between the poly-crystal silicone pattern of the lower layer and that of the upper layer formed on the lower layer with the layer insulating film inbetween in prevented. CONSTITUTION:On a field oxide film 23 and a thin oxide film 20 in an element forming region 22 which are formed on a semiconductor substrate such as Si, the first poly silicone layer 25 and a layer insulating film 26 are formed. The layer insulating film 26 is etched using a negative resist 27 as a mask and an undercut 28 is formed. Then the whole surface is coated by a positive resist 29, which is removed by developing and dissolving from the surface leaving a remaining layer 29' on the undercut 28. A puttern of the first poly-silicone layer 25 is stretched out of the lyer insulating film 26 for width W by etching using the negative resit 27 and the remaining layer 29' as masks. An insulating layer is formed all over the surface of the first poly silicone layer by oxidizing the surface of the first poly silicone layer. |
