| 摘要 |
PURPOSE:To control a crystal defect due to a shock at the time of bonding by depositing an insulating layer with a striped groove onto a semiconductor element substrate and forming an electrode to be shaped by a striped section, a bonding section and a crosslinking section. CONSTITUTION:The insulating layer 17 with the striped groove 18 is deposited on the semiconductor element substrate 16, and an electrode 19 consisting of the bonding section 21 and the crosslinking section 22 is formed in the striped section 20. The insulating layer of a section where the electrode is not shaped is removed, and the substrate is etched. Accordingly, the generation of the crystal defect in a light emitting layer 23 due to the shock at the time of the bonding of a gold wire 26 is controlled while the generation of leakage currents in the light emitting layer can be restrained. |
