| 摘要 |
PURPOSE:To increase output while facilitating manufacture by giving a function as a back light reflector having a high light reflectivity to a current injection electrode. CONSTITUTION:An active semiconductor layer 3, a clad region 4 containing a circular current injection section 4a, a Zn diffusion region 4b, the circular current injection section 4a and the electrode 5 on the surface of the Zn diffusion region 4b are formed successively onto a semiconductor substrate 2 with an electrode 1 containing a circular window for extracting light. The electrode 5 is shaped by an Au-Ge-Ni alloy. The electrode 5 forms the back reflector having approximately 100% light reflectivity on the interface between the circular current injection section 4a and the Zn diffusion region 4b. |
