| 摘要 |
<p>PURPOSE:To prevent the change to high resistance of the photoelectric type resistor as an insulator even in a dark place, and to use the resistor easily by forming a resistor film and a photoconductor film in contacting shapes. CONSTITUTION:The resistor film 1 in NiCr, Cr-SiO, etc. is formed being contacted with the photoconductive film 2 in CdSe, CdS, etc. Electrodes 3, 3 are shaped so as to contact with the resistor film 1 and the photoconductive film 2. In the photoelectric type resistor, resistance value is prescribed by the resistor film 1 under a dark condition and by the light resistance of the photoconductive film 2 under a light condition.</p> |
