| 摘要 |
PURPOSE:To obtain predetermined drift electric field and collector dielectric resistance by contacting a Ga solution containing a GaAs group solute and Si onto a P type emitter and forming an n type base and a p type collector having prescribed carrier concentration distribution through a slow cooling type liquid phase growth method. CONSTITUTION:A semiconductor substrate 1 in p type GaAs, etc. functioning as an emitter layer is placed in an oven, the Ga solution in which the GaAs solute and Si impurity are dissolved is positioned in the oven, and the n type GaAs base layer 2 and the p type GaAs collector layer 3 are successively grown continuously in a liquid phase according to a slow cooling system. Carrier concentration distribution, concentration thereof is slowly lowered toward the collector side from the emitter side, is formed in the base layer, and the temperature is dropped gradually so as to shape carrier concentration distribution, concentration thereof is increased by degrees with separation from the base side, in the collector layer. Accordingly, necessary drift electric field and collector dielectric resistance are obtained, and the transistor, which functions at high speed and has high dielectric resistance, can be formed. |
