| 摘要 |
PURPOSE:To provide a high speed performance and a multi-layer wiring by a method wherein a wiring of silicate with a high melting point is formed on a high density impurity layer positioned at the level lower than the main surface of a substrate and at the same time a wiring portion and a semiconductor region are seperated by an oxide film of the silicate with a high melting point. CONSTITUTION:After an SiO2 film 2 and an Si3N4 film 3 are formed on a P tyep Si substrate an Mo film is formed. As ion is implanted into a specified portion and is made react on the substrate by a thermal processing to form an MoSi2 film and at the same time on n<+> layer 8 is formed. Then an Si3N4 pattern is formed on the MoSi2 film and an oxide film 10 of the MoSi2 is formed by a thermal oxidization, so that a wiring layer 11 is formed and at the same time the wiring portion and the element portion are seperated to each other. With the above configuration, a high speed perfomance, a multi-layer wiring which has high reliabity and a miniaturization of the element can be achieved. |
