发明名称 SEMICONDUCTOR PRESSURE TRANSDUCER
摘要 PURPOSE:To obtain large output even by low pressure by forming a gauge resistor to a thin section between a thick central section and an outer circumferential section, using the resistor as a semiconductor measuring diaphragm and shaping an outside diameter of the thin section in predetermined size or larger. CONSTITUTION:The measuring diaphragm 1 consisting of a substance such as N type silicon has a central rigid body 3 at the center, a thick section of a fixing section 4 on the outer circumference and the thin section 5 functioning as an annular strain causing section at the middle. A plurality of the P type gauge resistors 6 are shaped to the thin section in the diametrical direction of the <111> axial direction, along which sensitivity is maximized. The outside diameter of the thin section of the measuring diaphragm is made 5mm. or larger. The ratio of the outside diameter to an inside diameter of the thin section is made value such as 0.7 or larger. Accordingly, the relationship of pressure-electrical output is rectilinear within a wide pressure range up to low pressure from high pressure. The relationship of pressure and output is rectilinear to pressure in both forward and reverse directions.
申请公布号 JPS5796574(A) 申请公布日期 1982.06.15
申请号 JP19800172047 申请日期 1980.12.08
申请人 HITACHI SEISAKUSHO KK 发明人 TAKAHASHI YUKIO;SHIMAZOE MICHITAKA;MATSUOKA YOSHITAKA
分类号 G01L9/04;G01L9/00;H01L29/84 主分类号 G01L9/04
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