| 摘要 |
PURPOSE:To enable the alignment to be performed with a high precision by forming grooves in a substrate, and filling the surrounding thereof with a material of a different refractive index. CONSTITUTION:In a substrate 16, there are provided trenches 15 and buried layers 11 filling the trenches 15, and the buried layers 11 are formed so as to have a height same as that of the surrounding part of the trenches 15 and have a refractive index different from that of the substrate 16 forming the surrounding of the trenches 15. For example, it the substrate 16 is Si, the buried layers 11 are silicon dioxide SiO2 or silicon nitride Si3N4, and the refractive indices of these layers 16, 11 are 3.55 for Si, 1.47 for SiO2 and 1.8 2.0 for Si3N4. And a resist film 13 is formed on these buried layers 11 and the substrate 16, and in this condition the alignment with a photomask is performed. With this, the precision of the alignment can be maintained high. |
