发明名称 HIGH FREQUENCY OSCILLATING CIRCUIT
摘要 PURPOSE:To compensate the temperature characteristics of a transistor for oscillation, by providing this transistor and a microstrip resonator on a dielectric substrate and a dielectric piece with the dielectric constant having a temperature coefficient respectively and embedding them. CONSTITUTION:On a dielectric substrate 15, a transistor TR1 is fitted, and a microstrip line resonator 2 is so embedded that is is connected to the base terminal of the TR1. A microstrip line 4 and a dielectric resonator 3 are connected to the collector, and a DC bias is given to a terminal 13, and the emitter is grounded by an emitter resistance 8 and a capacitor 11. Thus, the oscillating circuit is constituted by the feedback due to the internal capacity as well as the floating capacity between the emitter and the base and the internal capacity between the collector and the emitter, and the oscillation frequency is fluctuated by the equivalent capacity of the TR1 which has a positive temperature coefficient normally. Therefore, the resonator 2 is provided on the substrate 15 where the dielectric constant has a negative temperature coefficient to compensate the temperature characteristics of the TR1.
申请公布号 JPS5795705(A) 申请公布日期 1982.06.14
申请号 JP19800172383 申请日期 1980.12.05
申请人 MATSUSHITA DENKI SANGYO KK 发明人 MACHIDA TAKASHI;UENO TOMOKI
分类号 H03B9/12;H03B5/04;H03B5/18;H03L1/02 主分类号 H03B9/12
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