| 摘要 |
PURPOSE:To inhibit abnormal growth in multilayer epitaxial gowth and to obtain growth layer characterized by small dispersion in layer thickness and little variation in composition, by depositing a film which does not grow epitaxially on the peripheral part of a compound semiconductor substrate, and growing the substrate in the etched concave part in a liquid phase. CONSTITUTION:For example, the epitaxial layer is formed on the InP substrate 10 in multilayer structure by a sliding method, and the crystal substrate, which is used for, e.g., a semiconductor laser or a light emitting diode, is manufactured. An SiO2 film 11 is coated on the periphery of said substrate 10. Then, the substrate 10 is etched by using etchant of sulfuric acid or hydrogen peroxide series with the film 11 as a mask, and a step with a depth of about 10mum is formed. Thereafter, an N<+> type InP layer 12, and N type InGaAsP active layer 13, and a P type InP layer 14 are sequentially grown on said substrate in the liquid phase, and multilayer growing layer is formed. In this constitution the epitaxial growth is stopped at the interface between the SiO2 film 11 and the substrate 10, the abnormal growth is inhibited, and the growing layer having excellent uniformity and reproducibility can be obtained. |
