| 摘要 |
PURPOSE:To prevent the corrosion of Al while improving the wetproof property of the device by putting a nitride film between a bonding pad in Al and a PSG film for protecting the surface to obviate contact between the pad and the film. CONSTITUTION:The PSG film 4 as a protective film is deposited and formed on the whole surface of the device of an IC, etc. in which the bonding pad 3 in Al is shaped onto a layer insulating film 5. The film 4 is patterned so as not to directly contact with the pad 3, and the SiN film 6 is grown on the whole surface in the gaseous phase. The SiN film 6 on the bonding section of the pad 3 is removed through etching, and the bonding section is wire-bonded. Accordingly, since the SiN film 6 is put between the pad and the film 4, corrosion due to a reaction with the PSG film 4 cannot be generated even when moisture adheres on the pad 3, and the infiltration of moisture into the PSG film 4 can also be prevented. |
