| 摘要 |
PURPOSE:To reduce a capacity between a collector and a substrate, a base and a collector and also reduce a serial resistance between the collector and an emitter by use of an insulation and separation system for a dielectric. CONSTITUTION:When n layer 2 and p layer are imbedded in a p type Si substrate 1 by diffusinng As and B to it and further an epitaxial layer 4 is stacked thereon, a layer 3 rises higher than the layer 2. SiO25 is formed by providing a Si3O4 mask and further a SiO211 is formed thiner than the film 5 by providing an opening for the mask 6. Subseqneutly, an emitter lead out layer 7 is formed by etching a part of the mask 6 and successively a p<+> base lead out layer 8 and n<+> collector lead out layer 9 are provided to add a wiring layer 10 to them. According to the constitution, the capacity between the collector and substrate is set at a zero substantially. Therefore, if an emitter layer pattern is increased and a collector-emitter resistance is reduced, a capacity value is not increased. Since the contact area between the base and collector can be reduced by the SiO5, the capacity is also reduced. |
