| 摘要 |
PURPOSE:To make it possible to perform precise control of a film thickness and resistivity distribution, by inserting porous tube, wherein many holes are provided in the outer wall, into the inside of a reacting tube, enclosing a plurality of substrates in said tube, flowing main raw material gas in the porous tube, and flowing additional raw material gas through the gap between the reacting tube and the porous tube by utilizing the holes. CONSTITUTION:The porous tube 7 having many small holes 9 in the outer wall is enclosed in the reacting tube 2. Many sheets of semiconductor wafers 4 are implanted in the porous tube 7 with a suitable interval being provided. A gas nozzle 8 is provided between the reacting tube 2 and the porous tube 7 at the upstream side of the reacting tube 2. Flanges 10 are provided at both ends of the porous tube 7. Thus the specified gap is formed between the inner wall of the reacting tube 2 and the outer wall of the porous tube 7. In this constitution, a main stream 11 of the gas is flowed from the upstream side into the porous tube 7, and auxiliary gas is sent through the nozzle 8 and contacted with the substrates 4, through the small holes 9. Thus the growth in the hot wall type low pressure epitaxial growing device can be uniformly performed. |
