SEMICONDUCTOR STORAGE DEVICE

摘要

PURPOSE:To reduce the size of a load IGFET by using a field effect transistor (IGFET) of a load insulating gate type as a constant-current load. CONSTITUTION:A bias circuit 5 biasing the gate electrode of a load IGFET1 to a saturation region is formed by connecting a P channel bias setting IGFET6 whose gate and drain are connected together and a diffused resistance 7 with high impedance in series. Then, the potential of the drain elecrode of the IGFET6, obtained by the bias circuit 5, is supplied to the gate elecrode of each IGFET1 of a semiconductor storage device. Therefore, the FET1 is held at a gate potential automatically by the circuit 5 and the need for an auxiliary power source is eliminated to reduce the size of every FET1 by adding one circuit 5.