发明名称 FORMATION OF MICROPATTERN
摘要 PURPOSE:To accurately form a micropattern in a high yield by coating a substrate with a photosensitive film, imagewise exposing the substrate, and exposing it to plasma contg. oxygen. CONSTITUTION:A film 2 such as a silicon oxide film is formed on a substrate 1, and it is coated with a photoresist 3. The substrate is selectively irradiated with ultraviolet light through a photomask. Thus, the photoresist is separated into an exposed part 3b and an unexposed part 3a. By carrying out said processes in an atmosphere contg. nitrogen, a thin reaction product layer 3c soluble slightly in a developer and having several 100-several 1,000Angstrom thickness is formed on the surface of the photoresist layer. The whole substrate is then exposed to oxygen plasma with 200W RF power for 10min to remove the layer 3c, and development is carried out.
申请公布号 JPS5794750(A) 申请公布日期 1982.06.12
申请号 JP19800171264 申请日期 1980.12.04
申请人 NIPPON DENKI KK 发明人 KOUNO HIROMICHI
分类号 H05K3/08;G03F1/00;G03F1/68;G03F1/80;G03F7/039;G03F7/20;G03F7/36;H01L21/302;H01L21/3065 主分类号 H05K3/08
代理机构 代理人
主权项
地址