| 摘要 |
<p>The generator is formed using integrated bipolar technology. A source of voltage is formed using a Zener diode biased so as to be in its inverse conducting mode. Connected to the terminals of the diode is an assembly including a resistance integrated in series with three, directly-biassed semiconducting junctions. A transistor copies the current in one of these junctions. The transistor has its base and its emitter connected to the two terminals of the junction, the emitter and base forming a junction biassed in the same direction as the junction. The collector of the copying transistor is connected to a load to supply a current which is temperature stable. The first junction may be the base-emitter junction of a transistor of which the collector is connected to an electrical source at a voltage level at the avalanche voltage of the Zener diode, while the second junction may be the emitter-base junction of a transistor whose collector is connected to the resistance.</p> |
