| 摘要 |
PURPOSE:To prevent the disconnection of a wiring material by providing means for covering the necessary regions of a field oxidized film and a gate oxidized film of an MOS type semiconductor integrated circuit with a nitrided film, thereby eliminating the underhang under the polycrystalline silicon above the means. CONSTITUTION:In the steps of depositing a thin nitrided film on the overall surface after oxidizing a gate film, then depositing a polycrystalline silicon and photoetching a diffused mask, the underhang under the polycrystalline silicon due to oxidized film etchant is prevented at the time of forming and removing the mask with the nitrided film. For example, in the steps of manufacturing a semiconductor circuit of P type diffused layer 102, N type diffused layer 103, oxidized silicon films 106,107, polycrystalline silicon 108 and metallic wire 109, the underhang under the polycrystallien silicon due to the oxidizing film etchant of the fluoric acid paste with strong acidity of the nitrided film 301 newly added can be eliminated, thereby preventing the disconnection and decrease in the thickness of the metallic wire. |
