| 摘要 |
<p>PURPOSE:To protect an aluminum wiring layer against corrosion of phosphorus by covering the surface of the layer of a semiconductor device with an Al2O3 and covering a bonding pad with an SiN or SiO2. CONSTITUTION:An SiN film 5 is formed on a bonding pad, an Al2O3 film 6 is covered on the surface of an aluminum wiring layer 4, a phosphorus silicate glass (PSG) layer 7 is formed as a final protection film on the overall surface, a window larger than the width of the film 5 is opened at the layer 7, the PSG and the film 5 at the window are removed, and electrodes are formed at the window. Thus, the film 6 has an overhang extending internally from the layer 7 with the film 6', and the final protection film and the aluminum wiring layer are isolated via the film 6 and the overhang. Accordingly, the aluminum wiring layer is not affected by the phosphorus contained in the PSG.</p> |
