| 摘要 |
PURPOSE:To improve light transmittance without lowering the value of contrast by covering the regions formed with crossed finger type electrodes of the intermediate layers between the surfaces of a thin plate of PLZT and the crossed finger type electrodes with thin films of aluminum oxide. CONSTITUTION:1 is a thin plate consisting of PLZT permitting force phase transfer by a Kerr effect or electric field. The thin films 2, 2' of aluminum oxide provided on the main planes of said thin film 1 are so formed as to cover the region parts functioning as a solid state optical shutter by a method such as vapor deposition. Positive and negative electrode pairs 3, 4 of crossed finger type electrodes are formed on the surface of the layer 2, and these electrode pairs 3, 4 are connected to power feed terminal parts 6, 6. Electrode pairs 3', 4' are connected to power feed terminal parts 5' 6' and are formed on the surface of the layer 2' of aluminum oxide in a way as to assume symmetry with the electrode pairs 3, 4. Polarizing films are provided on both surfaces of the electrooptic effect element formed in this way, whereby it is constituted to the solid- state optical shutter. |
