| 摘要 |
PURPOSE:To prevent the production of a defect of a laminated layer due to an oxidation by emitting a laser light to a part of a peripheral bevel part of a semiconductor wafer, thereby producing many crystal defects at the emitted part to form a gettering sink. CONSTITUTION:A microscope 18 is so adjusted as to emit a laser light 4 to a short range of radii from 0.2-5mm. from the peripheral end 24 of a wafer 1 on a wafer placing base 2, xenon lamps 8, 9 are energized, a shutter 13 is then driven to condense a continuous pulse laser to the wafer 1 by the reflection of a mirror 15, the wafer 1 is thus rotated at a constant speed, and the laser light is emitted in a ring shape to the range from 0.2-5mm. from the periphery of the wafer 1. Thus, many crystal defects are produced on the locus on a circular orbit on the wafer 1 to form a circular gettering sink, thereby absorbing impurity becoming nuclide of generating the defect of a laminated layer due to its oxidation at the part of the wafer. |
