发明名称 FORMING METHOD FOR THIN FILM PATTERN
摘要 PURPOSE:To pattern a thin film with high precision by depositing an organic resin film and a metal film on a thin film on a step part on a substrate to reduce the step, by patterning the metal film highly precisely to take said film as a mask and by patterning the organic resin film. CONSTITUTION:A lower part magnetic substance film 2 is formed on a substrate 1, and an electric conductor 4 wound in a plural number of turns and the second insulating layer 6 insulating among the conductors are formed on the first insulating layer 5. Further, an upper part magnetic substance 3 comprising permalloy is formed, and polyimide resin 7 is applied so that when a step D is 6mum, a step E after applied is reduced to 1.5mum. A Mo metal film 8 is formed, and a photoresist is applied. And, by patterning said resist to use it as a mask, a Mo film is patterned, and then by using the Mo film as a mask the resin 7 and permaloy are patterned. Hereby, a high precision pattern is formed for a thin film having a step, in particular, a magnetic substance film on a magnetic head.
申请公布号 JPS5793526(A) 申请公布日期 1982.06.10
申请号 JP19800169619 申请日期 1980.12.03
申请人 DENSHI KEISANKI KIHON GIJUTSU KENKIYUU KUMIAI 发明人 NARUSHIGE SHINJI;YOSHINARI TSUNEO;SATOU MITSUO
分类号 G11B5/31;H01L21/027;H01L21/30 主分类号 G11B5/31
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