| 摘要 |
PURPOSE:To form the ohmic electrode with a desired shape without immersing a crystal substrate by using a double layer of an Al alloy and Al as an electrode material and employing an aqueous solution of NaOH or KOH as an etching liquid. CONSTITUTION:A desired section of the surface of a compound semiconductor, a principal ingredient thereof is Sb, is coated with an Al alloy film. An Al film is laminated on the Al alloy film, and coated. The Al alloy film and the Al film are processed in desired shapes by using the NaOH aqueous solution or the KOH aqueous solution. The technique of normal photo-lighegraphy is employed in order to process the Al alloy film and the Al film in the desired shapes, the aqueous solution of NaOH or KOH is preferable as the etching liquid at that time, and the Al alloy film and the Al film are etched without damaging the crystal substrate and wiring with the desired shape can be formed. |
