发明名称 MANUFACTURE OF SEMICONDUCTOR ELEMENT
摘要 PURPOSE:To facilitate the selection of semiconductor elements of inferior quality after a wafer is divided by a method wherein after dicing is performed, the wafer is inspected in condition being adhered to a holding plate, and groups of elements of inferior quality are formed being integrated in one body with a fixing agent. CONSTITUTION:The Si wafer 1 adhered to the holding plate 4 with wax 5 is diced 6. It is inspected in this condition with a microscope, epoxy resin is applied to the inferior parts, and is baked at 130 deg.C for nearly 10min. After then the wafer 1 is stripped off from the holding plate 4, wax is removed, and the wafer is divided by supersonic waves washing. The elements of inferior quality are formed being integrated is one body with resin, and selection is facilitated.
申请公布号 JPS5792845(A) 申请公布日期 1982.06.09
申请号 JP19800170667 申请日期 1980.12.01
申请人 MITSUBISHI DENKI KK 发明人 HISAMOTO YOSHIAKI
分类号 H01L21/66;(IPC1-7):01L21/66 主分类号 H01L21/66
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