| 摘要 |
PURPOSE:To obtain an RAM which permits a sense refresh amplifier to operate with high sensitivity all the time, by activating the sense refresh amplifier after boosting the voltage of a word line drive signal. CONSTITUTION:The voltage of the word line of a selected dynamic RAM cell in a matrix array is boosted through a word line drive signal generating circuit up to a voltage SW higher than a power source voltage. A capacitor CB, on the other hand, is charged with the boosted voltage through a delay circuit. This charging voltage SB becomes a trigger signal through the delay circuit and an inverting circuit after the word-line voltage boosting to activate a sense refresh amplifier. Consequently, the boosting of the voltage SW never causes the sense refresh amplifier to have a noise and neither the variation of parts in manufacture nor the influence of variations in power source voltage occurs. Therefore, a dynamic RAM which allow the sense refresh amplifier to operate with high sensitivity is obtained all the time. |
