| 摘要 |
PURPOSE:To prepare a semipermeable film with good preciseness in film thickness and good quality by moving ion formed by subjecting a stock gas to plasma conversion throughout a magnetic field to reach the same to a surface of a substrate plate. CONSTITUTION:A stock gas such as a monosilane gas or the like is supplied into a reaction tube 1 to be subjected to plasma conversion and, thereafter, the formed ion is moved throughout a magnetic field. Then, Lorentz force is acted on the ion and cation is bent downwardly and anion upwardly. As the result, the cation is reached to a lower electrode 4 and the anion to an upper electrode 5 and electromotive force is generated between both electrodes. In this condition, when both electrodes 4, 5 are connected, because the ions are converted to an atom or an atomic group, said ions are deposited on a conductive substrate plate of the electrodes. Thereby, a semiconductor which has good preciseness in film thickness, is free from contamination and has good quality is prepared. |
