| 摘要 |
<p>PURPOSE:To obtain a stable film characterized by high peeling strength with a substrate and low surface resistance, by forming tantalum films, in which two layers of tantalum metal thin films are provided and the main component of the tantalum layer on the surface side is alpha-tantalum. CONSTITUTION:A tantalum layer 3 on the side of substrate and a tantalum layer 2 on the surface side are sequentially formed by a sputtering method. In order to form the tantalum layer 3 on the substrate side, whose main component is beta-tantalum, sputtering pressure is adjusted so that the partial pressure of nitrogen gas in discharge gas during the sputtering is 10<-4> Torr with the temperature of the glass substrate at about 200 deg.C, and input power is made to be 1 KW. Thus the sputtering is carried out. In order to form the tantalum layer 2 on the surface side, whose main component is alpha-tantalum, sputtering pressure is adjusted so that the partial pressure of the nitrogen gas in the discharge gas during the sputtering is 10<-3>-10<-4> Torr with the temperature of the glass substrate as about 200 deg.C, and input power is made to be 0.75 KW. Thus the sputtering is carried out. A tightly contacting film of tantalum oxide 4 is introduced between the substrate 1 and the tantalum layer 3 on the side of the substrate, and the peeling strength with the substrate is increased.</p> |
