| 发明名称 |
METHOD OF FABRICATING CONDUCTING OXIDE-SILICON SOLAR CELLS |
| 摘要 |
The angle of deposition of tin oxide or indium tin oxide on silicon is critical in forming highly efficient heterojunction solar cells. |
| 申请公布号 |
CA1125424(A) |
申请公布日期 |
1982.06.08 |
| 申请号 |
CA19790328519 |
申请日期 |
1979.05.28 |
| 申请人 |
EXXON RESEARCH AND ENGINEERING COMPANY |
发明人 |
FENG, TOM;GHOSH, AMAL K. |
| 分类号 |
H01L31/04;C23C14/22;C23C14/24;H01L21/203;H01L21/363;H01L31/06 |
主分类号 |
H01L31/04 |
| 代理机构 |
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代理人 |
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| 地址 |
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