Sapphire single crystal substrate consisting essentially of Ga2O3 for semiconductor devices

摘要

A single crystal substrate for epitaxial growth thereon of a semiconductor layer. The substrate consisting essentially of sapphire (aluminum oxide) and at least one additive selected from a group consisting of oxides of gallium. A 87 mol percent content of gallium oxide is most preferred for a silicon layer. Similarly, an additive and its content should most preferably be selected depending on the semiconductor, which may be gallium phosphide, aluminium phosphide, or zinc sulphide.