发明名称 VAPOR PHASE EPITAXIALLY GROWING METHOD FOR MAGNESIA SPINEL
摘要 PURPOSE:To produce a magnesia spinel of high quality by mixing a source retained at the prescribed temperature with a reactive substance to be contacted with single crystal substrate of cubic crystal type sealed in a reaction container of the prescribed temperature. CONSTITUTION:When a magnesia spinel single crystal layer is epitaxially grown on a single crystal substrate 2 in a reaction container 1, the source of Al, MgCl2 and reactive substance such as CO2, HCl, H2, are divided into three transporting systems to produce an Al2O3 becoming catalysts in the source chamber 4 of the aluminum source 5, the source 8 of MgCl2 is converted partly to MgO via the infinitesimal amount of the H2O in H2 gas in the source chamber 7, these reactive products and unreacted product are transported with the H2 and CO2 from the third transporting system onto the substrate 2 to grow the magnesia spinel. In this manner, the conversion efficiency of the MgO is improved, the partial pressure and reaction temperature of the MgCl2 can be reduced, and Mg can be eliminated.
申请公布号 JPS5791539(A) 申请公布日期 1982.06.07
申请号 JP19800167508 申请日期 1980.11.28
申请人 FUJITSU KK 发明人 IHARA MASARU;CHIFUKU MASAYUKI
分类号 H01L27/00;C30B25/02;C30B29/26;H01L21/31;H01L21/86 主分类号 H01L27/00
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