| 摘要 |
PURPOSE:To improve the throughput of an electron beam exposure system by selectively reading a purality of pattern package memories storing fundamental pattern data different from each other, thereby drawing with electron beam of predetermined pattern. CONSTITUTION:When N-types of fundamental patterns are provided. M pieces of pattern packages 1 more than N pieces up to PPM-1-PPM-M are provided, data corresponding to the fundamental pattern are stored, a memory 1 is accessed via a selection switch 5 by a CPU3, exposure control data is fed to an exposure control circuit 4, the data of the memory is read via a selection switch 6, and a blanking signal B1, and a deflection signal def-x, def-y are controlled corresponding to the data. In this manner, the data transferring number can be reduced, thereby improving the throughput of the system. |
