| 摘要 |
PURPOSE:To obtain the wire, grain size thereof is not roughened, tensile strength thereof is large and which can bond at high speed as the results by composing the bonding wire used for connecting a semiconductor element electrode and an external lead of gold having high purity containing 0.0001-0.01wt% hafnium. CONSTITUTION:0.0001-0.01wt% hafnium is contained in the gold having high purity, and the bonding wire having strength required for bonding at high speed is obtained without damaging bonding property. The wt% of the hafnium contained in the pure gold is limited here because electric resistance increases and the gold cannot be used as the bonding wire when the content exceeds 0.01wt% and the effect of the hafnium is not displayed when the content is smaller than 0.0001wt%. |
