| 摘要 |
PURPOSE:To increase tensile strength without damaging bonding property by using an alloy, which is manufactured by adding Ni and Si to gold having high purity so that the molar ratio is 2:1 and the sum total is within a predetermined range, as the bonding wire for a semiconductor element. CONSTITUTION:An electrode 2 of the semiconductor element 1 and an external lead 4 are thermally pressure-welded to a metallic wire 3 wire-bonding the electrode and the lead by using a gold wire, and connected electrically. The alloy manufactured by adding a small quantity of Ni and Si to the Au having high purity (approximately 99.99% or higher) at the molar ratio of 2:1 is employed as the gold wire. The Ni and the Si are added so that the sum total of both elements is within a range of 0.0001-0.01wt%. Accordingly, since the tensile strength can be increased, the electrode and the external lead can be bonded automatically at high speed without thickening a wire diameter and adding noxious Be, etc., and the reliability of bonding can be improved. |
