| 摘要 |
PURPOSE:To increase the tensile strength of the wire, and to improve the reliability of wire bonding for a semiconductor element by using a wire prepared by containing Mg in the quantity of a predetermined range in Au having high purity as the wire bonding. CONSTITUTION:An electrode 2 formed to the semiconductor element 1 and an external lead 4 are bonded through a thermal pressure welding method by using an Au wire 3, and connected electrically. The Au wire 3 used for the bonding is manufactured in such a manner that 0.0001-0.01wt% electrolytic Mg is added to the electrolytic Au having high purity (approximately 99.999%), dissolved and casted, and rolled and stretched to a desired wire diameter. Accordingly, the tensile strength can be increased more than a pure gold wire without remarkably increasing the resistance value of the gold wire, and bonding property is not damaged, thus improving reliability. |
