Semiconductor device and process for producing a semiconductor device

摘要

The novel semiconductor device comprises a semiconductor wafer which has a groove (406) coated with a thin glass layer (410) for separating the semiconductor device into a multiplicity of semiconductor components. The semiconductor device can readily be separated along a raised section (407) on the floor of said groove (406) without the glass layer (410) cracking or breaking off. In the novel production process, the raised section (407) on the floor of the groove (406) is produced by creating a zone on the surface of the intended separation section of the semiconductor wafer which does not include the central region of the separation section, the etching rate of said zone being higher than the etching rate of the remaining region of the surface, and then etching the semiconductor wafer. <IMAGE>