| 摘要 |
A pattern exposure mask comprising a support (1, 2) provided with a plurality of patterning films (3 and 4, 5) which respectively have different absorptive or stopping power with respect to different electro- magnetic or quantum rays (6, 7) (e.g. light, X-rays electron beams) such that each patterning film (3 and 4, 5) has such power only with respect to certain of said rays. <IMAGE> |
