| 摘要 |
PURPOSE:To decrease punching through by providing a multi-crystal Si layer between metal wiring and a diffusion layer of an MOSFET. CONSTITUTION:A gate oxide film 103 is formed on an Si substrate having a field oxide film 102 and a source drain regions. And a multi-crystal Si electrode 104 is also formed and, through an interlayer insulation film 106, metal wiring 107 is formed. This decreases a stage difference preventing a short circuit due to a misfitting at the time of photo etching and also controls punching-through that short circuits the substrate and the metal wiring below it. |
