| 摘要 |
PURPOSE:To obtain minute spot oscillation at a groove by providing built-in voltage difference at a p N junction of the upper portion of the groove and other part, diffusing Zn, without allowing it to reach an active layer, doped in a substrate via the groove provided on the surface of the substrate. CONSTITUTION:A stripe shaped groove 12 is provided on a P type GaAs substrate doped with Zn. The first clad layer 14 is grown to fill the groove 12 and a P type active layer 13, N type second clad layer 15 and a cap layer 16 are consecutively formed. When Zn in the substrate 11 is diffused in the clad layer 14, a junction is formed in the second clad layer 15 except at the top of the groove 12, and a junction is made on the border of the layer 14 and 13 over the groove 12. This makes the built-in voltage higher than that at the border of the layers 14 and 13 producing a minute spot oscillation. |
