发明名称 |
SEMICONDUCTOR LIGHT DETECTION ELEMENT |
摘要 |
PURPOSE:To improve the sensitivity to light and decrease sensitivity dispersion by making light irradiate from the side of a metal or metal silicide provided at a light detector. CONSTITUTION:A opening 9 is made on an electrode 6 at a light detector 5 on a P type Si substrate 1 in such a way that the light can fall through the side of a metal or metal silicide. Platinum or P type silicide are used for the metal or the metal silicide. This improves the sensitivity of the detector and decrease sensitivity dispersion. |
申请公布号 |
JPS5789272(A) |
申请公布日期 |
1982.06.03 |
申请号 |
JP19800167298 |
申请日期 |
1980.11.25 |
申请人 |
MITSUBISHI DENKI KK |
发明人 |
HIRATA KATSUHIRO;DENDA MASAHIKO;TSUBOUCHI NATSUO;KIMATA MASAAKI;UEMATSU SHIGEYUKI |
分类号 |
H01L31/108 |
主分类号 |
H01L31/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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