发明名称 SEMICONDUCTOR LIGHT DETECTION ELEMENT
摘要 PURPOSE:To improve the sensitivity to light and decrease sensitivity dispersion by making light irradiate from the side of a metal or metal silicide provided at a light detector. CONSTITUTION:A opening 9 is made on an electrode 6 at a light detector 5 on a P type Si substrate 1 in such a way that the light can fall through the side of a metal or metal silicide. Platinum or P type silicide are used for the metal or the metal silicide. This improves the sensitivity of the detector and decrease sensitivity dispersion.
申请公布号 JPS5789272(A) 申请公布日期 1982.06.03
申请号 JP19800167298 申请日期 1980.11.25
申请人 MITSUBISHI DENKI KK 发明人 HIRATA KATSUHIRO;DENDA MASAHIKO;TSUBOUCHI NATSUO;KIMATA MASAAKI;UEMATSU SHIGEYUKI
分类号 H01L31/108 主分类号 H01L31/108
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