| 摘要 |
PURPOSE:To prevent the disconnection of a wiring metal, by removing over half of etching material, followed by removing the rest while applying ultrasonic vibration, at a photoetching process with the use of wet etching liquid. CONSTITUTION:A material to be etched 2 formed on a semiconductor substrate 1 is removed over half of it with etching liquid from an opening of a photo- resist film 4. And then, the rest is etched while applying ultrasonic vibration. This vibration 5 is reacted to a resist portion which does not stick to the material to be etched. It decreases its sticky condition and smooths the edges of the material to be etched. An IC with no disconnection illustrated in the figure can be obtained, even if a wiring metal 3 is formed on the material to be etched 2 after completion of etching, accordingly. |
