| 摘要 |
A high power field effect controlled semiconductor rectifier is constructed so that the rectifier is normally off and can be switched on by applying a bias signal to a gate 68 of a metal-insulator-semiconductor structure monolithically integrated with the rectifier in such a manner as to induce a contacting channel including inversion layer 78 and accumulation layer 79, between the anode 62 and cathode 70 of the rectifier. The device has both forward and reverse blocking capability and a low forward voltage drop when in the conducting state. The device has a very high turn-off gain and both high dV/dt and di/dt capabilities. <IMAGE> |
